NTDN/D. NTDN, NVDN. Power MOSFET. 30 V, 54 A, Single N− Channel, DPAK/IPAK. Features. • Low RDS(on) to Minimize Conduction Losses. SIDY Transistor Datasheet, SIDY Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. AOC Transistor Datasheet, AOC Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.
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Save this item to a new parts list. When board space is a key concern, AOC provides a great option to further enhance power density. The Manufacturers disclaim all warranties including implied warranties of merchantability or fitness for a particular purpose and mpsfet not liable for any damages arising from your use of or your inability to use the Information downloaded from this website.
SI4810DY MOSFET. Datasheet pdf. Equivalent
Please enter a message. Availability All devices are immediately available in production quantities with a lead-time. You can of course change the setting.
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We, the Manufacturer or our representatives may use your personal information to contact you to offer support for your design activity and for other related purposes. Each In a Tube of Pay attention, some cookies cannot be removed To cancel some cookies, please follow the procedures on the following links AddThis. Dialog finds a better way out from under Apple. The Manufacturers reserve the right to change this Information at any time without notice.
SIDY MOSFET Datasheet pdf – Equivalent. Cross Reference Search
Rated with a 30 V breakdown voltage, it is capable of charging and discharging a laptop battery pack with the least amount of power loss and heat dissipation. The AON provides an extra level of protection with an internal temperature sense diode that provides first-hand thermal information to the battery control IC.
Please enter a message. Maximum Drain Source Resistance. Maximum Gate Threshold Voltage.
Typical Turn-On Delay Time. Maximum Gate Source Voltage. Technology News Misfet 03, Maximum Drain Source Voltage. The foregoing information relates to product sold on, or after, the date shown below. Be careful, if you disable it, you will not be able to share the content anymore. You agree that the Information as provided here by RS may not be error-free, accurate or up-to-date and that it is not advice.
High performance common-drain MOSFETs help battery pack designers simplify designs
These cookies allow you to share your favourite content of the Site with other people via social networks. Inpho Venture Summit to highlight “deeptech”. The products provide ultra-low RSS source-to-source resistance of less than 10mOhms at 10 V gate drive. The Manufacturers and RS disclaim all warranties including implied warranties of merchantability or fitness for a particular purpose and are not liable for any damages arising from your use of or your inability to use the Information downloaded from this website.
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AOC MOSFET Datasheet pdf – Equivalent. Cross Reference Search
Typical Turn-Off Delay Time. ST licenses Atomera manufacturing technology.
Save to an existing parts list Save to a new parts list. AON, AON, and AOC provide ideal solutions for enhancing battery pack performance in the latest generation ultrabooks and tablets, where low conduction loss is a must for optimizing battery life.
Thank you for your feedback. The product detailed below complies with the specifications published by RS Components. mosfeg
Thank you for your feedback. Save to parts list Save to parts list. Maximum Drain Source Resistance. Add to a parts list. The Manufacturers and RS reserve the right to change this Information at any time without notice.
Sending feedback, please wait Save to an existing parts list Save to a new parts list. Please select an existing parts list. The devices are suitable for battery pack applications where two n-channel MOSFETs are connected back-to-back for safe kosfet and discharging as well as mosret protection.